PART |
Description |
Maker |
CY7C1364C |
Memory : Sync SRAMs
|
Cypress
|
CY7C1381C-117AI CY7C1383C-100BZI CY7C1383C CY7C138 |
Memory : Sync SRAMs 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
|
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|
GS88032AT-166 GS88018AT-166 GS88036AT-166 GS88032A |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 1856K × 3256K × 36 9Mb以上同步突发静态存储器 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 18256K × 32256K × 36 9Mb以上同步突发静态存储器
|
Electronic Theatre Controls, Inc.
|
GS8640E18T-200IV GS8640E18T-250V GS8640E18T-200V G |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8640V36T-200 GS8640V36T-300 GS8640V36T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
GS864018GT-250I GS864018GT-300I GS864018T-167 GS86 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS864218B-167IV GS864218B-167V GS864218B-200IV GS8 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS864418E-200 GS864418E-200I GS864418E-133 GS86441 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8644V36E-250 GS8644V18E-133I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|